GT60N321 DOWNLOAD

Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. Fourth Generation IGBT.

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GT60N -N Channel,IGBT

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The IGBT combines the gt60n321 gate-drive characteristics of the MOSFETs with the high-current and gt60n321 capability of bipolar transistors by combining yt60n321 isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single gt60n321.

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GT60N datasheet –

The item you’ve selected was not added to your cart. The product does gt60n321 contain any of the restricted substances in concentrations and applications banned by the Directive, gt60n321 for components, the gt60n321 is capable of being worked on at the higher temperatures required by lead—free soldering The restricted substances and maximum gt60n321 concentrations in the homogenous material are, by weight: People who viewed this item also viewed.

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