Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. Fourth Generation IGBT.
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GT60N -N Channel,IGBT
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The IGBT combines the gt60n321 gate-drive characteristics of the MOSFETs with the high-current and gt60n321 capability of bipolar transistors by combining yt60n321 isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single gt60n321.
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GT60N datasheet –
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